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Chemical etchants for various thin films used in semiconductor devices.

For more information on products, recommended photoresist types, applications and compatibility charts please visit Transene.

Film Type Etchants Range
Al Aluminum Etchants
at 25°C, at 40°C
30 �/sec, 40 �/sec
80 �/sec, 125 �/sec
Al2O3 Transetch - N 120 �/sec at 180°C
Cr Chromium Etch-473
Chromium Etch-TFD
Chromium Etch-1020
at 25°C, at 40°C
14 �/sec, 25 �/sec
--, 50 �/sec
Cr-CrO Chromium Etch-TFD
Chromium Etch-1020
Chromium Cermet
Etchant - TFE
1000 �/min at 50°C
Cu Copper Etch 100
Copper Etch 200
APS Copper 100
1 mil/min at 50°C
.5 mil/min at 50°C
80 �/sec at 40°C
GaAs Gallium Arsenide 20 �/sec to 100 �/sec
GaN Gallium Nitride 80 �/min at 180°C
Ga2O3 Gallium Oxide 10 SEC. at 25°C
GaP Gallium Phosphide A Face(Ga): 115 �/hr
B Face (P): 210 �/hr,80°C
Ge Germanium 250 �/sec at 20°C
Au Gold Etchant TFA 28 �/sec at 25°C
In2O3 Indium Oxide 30 min at 25°C
InP Indium Phosphide 30 mins at 25°C
Fe2O3 Iron Oxide ME-10 50 �/sec at 25°C
Mo Moly Etchant 55 �/sec at 30°C
85 �/sec at 60°C
Nb Niobium 50 �/sec at 25°C
Ni-Cr Nichrome Etch - TFC
NIckel Etch TFN
20 �/sec at 25°C
50 �/sec at 40°C
Ni Nickel Etch - TFB
NIckel Etch TFG
30 �/sec at 25°C
50 �/sec at 40°C
Pd Palladium Etchant - TFP 110 �/sec at 50°C
Pt Platinum Etch 1:1 10 �/sec at 25°C
Si Silicon Slow Etch
Silicon Mesa Etch
SiO2 Buffer HF (thermally grown)
Siloxide Etch (deposited)
800 �/min at 25°C
2400 �/min at 25°C
SiO Silicon Monoxide Etch 5000 �/min at 85°C
Si3N4 Transetch - N 125 �/min at 180°C
Ag Silver Etchant - TFS 200 �/sec at 25°C
Ta Tantalum Etch SIE-8607 70 �/sec at 25°C
Ti Titanium Etchant - TFT 25 �/sec at 20°C
50 �/sec at 30°C
Ti-W Ti-Tungsten Etch TiW-30 20 �/sec
W Tungsten Etch TFW 140 �/sec at 30°C
SnO, ITO TE-100 30 MIN at 25°C