Transene

www.transene.com

Chemical etchants for various thin films used in semiconductor devices.

For more information on products, recommended photoresist types, applications and compatibility charts please visit Transene.

Film Type	Etchants	Range
Al	Aluminum Etchants TYPE A TYPE D	at 25°C, at 40°C 30 �/sec, 40 �/sec 80 �/sec, 125 �/sec
Al₂O₃	Transetch - N	120 �/sec at 180°C
Cr	Chromium Etch-473 Chromium Etch-TFD Chromium Etch-1020	at 25°C, at 40°C 14 �/sec, 25 �/sec --, 50 �/sec
Cr-CrO	Chromium Etch-TFD Chromium Etch-1020	Variable Variable
Cr-Si Cr-SiO	Chromium Cermet Etchant - TFE	1000 �/min at 50°C
Cu	Copper Etch 100 Copper Etch 200 APS Copper 100	1 mil/min at 50°C .5 mil/min at 50°C 80 �/sec at 40°C
GaAs	Gallium Arsenide	20 �/sec to 100 �/sec
GaN	Gallium Nitride	80 �/min at 180°C
Ga₂O₃	Gallium Oxide	10 SEC. at 25°C
GaP	Gallium Phosphide	A Face(Ga): 115 �/hr B Face (P): 210 �/hr,80°C
Ge	Germanium	250 �/sec at 20°C
Au	Gold Etchant TFA	28 �/sec at 25°C
In₂O₃	Indium Oxide	30 min at 25°C
InP	Indium Phosphide	30 mins at 25°C
Fe₂O₃	Iron Oxide ME-10	50 �/sec at 25°C
Mo	Moly Etchant	55 �/sec at 30°C 85 �/sec at 60°C
Nb	Niobium	50 �/sec at 25°C
Ni-Cr	Nichrome Etch - TFC NIckel Etch TFN	20 �/sec at 25°C 50 �/sec at 40°C
Ni	Nickel Etch - TFB NIckel Etch TFG	30 �/sec at 25°C 50 �/sec at 40°C
Pd	Palladium Etchant - TFP	110 �/sec at 50°C
Pt	Platinum Etch 1:1	10 �/sec at 25°C
Si	Silicon Slow Etch Silicon Mesa Etch	Variable Variable
SiO₂	Buffer HF (thermally grown) Siloxide Etch (deposited)	800 �/min at 25°C 2400 �/min at 25°C
SiO	Silicon Monoxide Etch	5000 �/min at 85°C
Si₃N₄	Transetch - N	125 �/min at 180°C
Ag	Silver Etchant - TFS	200 �/sec at 25°C
Ta	Tantalum Etch SIE-8607	70 �/sec at 25°C
Ti	Titanium Etchant - TFT	25 �/sec at 20°C 50 �/sec at 30°C
Ti-W	Ti-Tungsten Etch TiW-30	20 �/sec
W	Tungsten Etch TFW	140 �/sec at 30°C
SnO, ITO	TE-100	30 MIN at 25°C