Semiconductor Constants
This section includes information on properities of silicon, germanium, gallium arsenide, and other semiconductors.
Energy Gap in III-V Ternary Semiconductors
Silicon
Germanium
Gallium Arsenide
Other
Properties of Si
| Crystal Properties | |
| Atoms/cm3 | 5.0e22 |
| Atomic weight | 28.086 |
| Crystal Structure | Diamond |
| Density | ~3e5 |
| Lattice Constant | 5.4310 A |
| Band Structure Properties | |
| Dielectric Constant | 11.9 |
| Eff. Density of States (conduction, Nc) | 2.8e19 cm-3 |
| Eff. Density of States (valence, Nv) | 1.04e19 cm-3 |
| Electron Affinity | 4.05 |
| Minimum Indirect Energy Gap (300k) | 1.12 eV |
| Minimum Direct Energy Gap | 3.4 eV |
| Intrinsic Carrier Concentration | 1.45e10 cm-3 |
| Intrinsic Debye Length | 24 um |
| Intrinsic Resistivity | 2.3e5 ohm-cm |
| Minority Carrier Lifetime | 2.5e-3 s |
| Mobility (Drift) (cm2/V-s) | 1500(Electron) 450(Hole) |
| Thermal Properties | |
| Linear Coefficient of Thermal Expansion | 2.6e-6 (degC-1) |
| Melting Point | 1414 degC (estimated) |
| Boiling Point | 2878 degC |
| Specific Heat | 0.7 J/g - degC |
| Thermal Conductivity @ 300K | 1.5 W/cm-degC |
| Thermal Diffusivity | 0.99 cm2/s |
| Vapor Pressure (Pa) | 1@1650 degC 1e-6@900degC |
| Other Properties | |
| Hardness | 1150 kg/mm2 |
| Compressibility Coefficient | 1.0 cm2/dyne |
| Bulk Modulus | 9.8 dyne/cm2 |
| Young's Modulus | 1.3 dyne/cm2 |
| Coefficient of Thermal Expansion | 2.33 /degC |
| dn/dT | 1.2 degC |
| Elastic Constant C11 | 1.656 dyne/cm2 |
| Elastic Constant C12 | 0.639 dyne/cm2 |
| Elastic Constant C44 | 0.795 dyne/cm2 |
| Breaking Strength Compression | 4900-5600 Kg/cm2 |
| Rupture Modulus Bending | 700-3500 Kg/cm2 |
Properties of Ge
| Crystal Structure | Diamond |
| Auger Recombination Coefficient | 10-30 cm6/s |
| Debye Temperature | 374 K |
| Density | 5.3234 g/cm3 |
| Dielectric Constant | 16.2 |
| Effective Electron Masses mI | 1.6 mo |
| Effective Electron Masses mt | 0.08 mo |
| Effective Hole Masses mh | 0.33 mo |
| Effective Hole Masses mlp | 0.043 mo |
| Electron Affinity | 4.0 eV |
| Lattice Constant | 5.659 A |
| Optical Phonon Energy | 0.037 eV |
| Breakdown Field | 105V cm-1 |
| Mobility Electrons | 3900 cm2 V-1s-1 |
| Mobility Holes | 1900 cm2 V-1s-1 |
| Diffusion Coefficient Electrons | 100 cm2 s-1 |
| Diffusion Coefficient Holes | 50 cm2 s-1 |
| Electron Thermal Velocity | 3.1·105m s-1 |
| Hole Thermal Velocity | 1.9·105m s-1 |
| Infrared Refractive Index n | 4.00 |
| Radiative Recombination Coefficient | 6.4·10-14 cm3/s |
| Bulk Modulus | 7.5·1011 dyn cm-2 |
| Melting point | 937 deg C |
| Specific Heat | 0.31 J g-1 °C-1 |
| Thermal Conductivity | 0.58 W cm-1 °C-1 |
| Thermal Diffusivity | 0.36 cm2s-1 |
| Thermal Expansion Linear | 5.9·10-6 °C -1 |
| Density | 5.323 g cm-3 |
| Cleavage Plane | { 001 } |
| Elastic Modulus C11 | 12.60 x 10^11 dyn cm-2 |
| Elastic Modulus C12 | 4.40 x 10^11 dyn cm-2 |
| Elastic Modulus C44 | 6.77 x 10^11 dyn cm-2 |
Properties of GaAs
| Crystal Structure | Zinc Blende |
| De Broglie Electron Wavelength | 240 A |
| Debye Temperature | 360 K |
| Density | 5.32 g cm-3 |
| Dielectric Constant (Static) | 12.9 |
| Dielectric Constant (High Frequency) | 10.89 |
| Effective Electron Mass me | 0.063mo |
| Effective Hole Masses mh | 0.51mo |
| Effective Hole Masses mlp | 0.082 mo |
| Electron Affinity | 4.07 eV |
| Lattice Constant | 5.65325 A |
| Optical Phonon Energy | 0.035 eV |
| Energy Gap | 1.424 eV |
| Energy Separation (EΓL) Between Γ and L Valleys | 0.29 eV |
| Energy Separation (EΓX) Between Γ and X Valley | 0.48 eV |
| Energy Spin-orbital Splitting | 0.34 eV |
| Intrinsic Carrier Concentration | 2.1·106 cm-3 |
| Intrinsic Resistivity | 3.3·108 Ω·cm |
| Effective Conduction Band Density of States | 4.7·1017 cm-3 |
| Effective Valence Band Density of States | 9.0·10-18 cm-3 |
| Breakdown Field | ≈4·105 V/cm |
| Mobility Electrons | ≤8500 cm2 V-1s-1 |
| Mobility Holes | ≤400 cm2 V-1s-1 |
| Diffusion Coefficient Electrons | ≤200 cm2/s |
| Diffusion Coefficient Holes | ≤10 cm2/s |
| Electron Thermal Velocity | 4.4·105 m/s |
| Hole Thermal Velocity | 1.8·105m/s |
| Infrared Refractive Index | 3.3 |
| Radiative Recombination Coefficient | 7·10-10 cm3/s |
| Bulk Modulus | 7.53·1011 dyn cm-2 |
| Melting Point | 1240 °C |
| Specific Heat | 0.33 J g-1°C -1 |
| Thermal Conductivity | 0.55 W cm-1 °C -1 |
| Thermal Diffusivity | 0.31cm2s-1 |
| Thermal Expansion (Linear) | 5.73·10-6 °C -1 |
| Density | 5.317 g cm-3 |
| Cleavage Plane | { 110 } |
| Piezoelectric Constant | e14=-0.16 C m-2 |
| C11 | 11.90·1011 dyn/cm2 |
| C12 | 5.34·1011 dyn/cm2 |
| C44 | 5.96·1011 dyn/cm2 |
Properties of Select Binary Semiconductors
| Parameter | AIP | AIAs | AsSb | GaP | GaAs | GaSb | InP | InAs | InSb | ||
| Direct Energy Gap (eV@300K) | Γ15- Γ1 | 3.62 (77K) | 3.14 | 2.22 | 2.78 | 1.424 | 0.70 | 1.34 | 0.356 | 0.180 | |
| Direct Energy Gap (eV @0K) | Eg = Ego - αT2/(T+β) | Eg | 2.52 | 2.239 | 1.687 | 2.338 | 1.519 | 0.810 | 1.421 | 0.420 | 0.236 |
| Direct Energy Gap (eV @0K) | Eg = Ego - αT2/(T+β) | α (10-4eV/K) | 3.18 | 6.0 | 4.97 | 5.771 | 5.405 | 3.78 | 3.63 | 2.50 | 2.99 |
| Direct Energy Gap (eV @0K) | Eg = Ego - αT2/(T+β) | β | 588 | 408 | 213 | 372 | 204 | 94 | 162 | 75 | 140 |
| Indirect Energy Gap | Γ15- X1 | 2.45 | 2.14 | 1.63 | 2.268 | 1.804 | 1.25 (10K) | 2.74 | -- | -- | |
| Temperature Dependence Direct | dEd/dT | -3.6 | -5.2 | -3.5 | -4.5 | -3.9 | -3.7 | -2.9 | -3.5 | -2.8 | |
| Temperature Dependence direct | dEind/dT | -- | -4.0 | -- | -5.2 | -2.4 | -- | -3.7 | -- | -- | |
| Indirect Energy Gap | Γ15- L1 | -- | -- | -- | -- | 1.81 (110K) | 0.81 | 1.74 | -- | -- | |
| Lattice Constant | 5.467 | 5.660 | 6.136 | 5.4512 | 5.6532 | 6.0959 | 5.8687 | 6.0583 | 6.4794 | ||
| Density (gm cm-3) | 2.40 | 3.70 | 4.26 | 4.138 | 5.3161 | 5.6137 | 4.81 | 5.667 | 5.7747 | ||
| Melting Point (K) | 2823 | 2013 | 1338 | 1740 | 1513 | 985 | 1335 | 1215 | 800 | ||
| Coefficient of Thermal Expansion 10-6/C (@300K) | 4.5 | 4.9 | 4.0 | 4.5 | 6.86 | 7.75 | 4.75 | 4.52 | 5.37 | ||
| Thermal Conductivity | (W cm-1 K-1) | 0.9 | 0.8 | 0.57 | 0.77 | 0.46 | 0.39 | 0.68 | 0.273 | 0.166 | |
| Refractive index n (near Eg) | 3.03 | 3.18 | 3.4 | 3.45 | 3.65 | 3.82 | 3.41 | 3.52 | 4.00 | ||
| Dielectric Constant Static ε(0) | 9.8 | 10.06 | 12.04 | 11.1 | 12.91 | 15.69 | 12.61 | 15.15 | 17.7 | ||
| Dielectric Constant High f ε(∞) | 7.54 | 8.16 | 10.24 | 9.08 | 10.9 | 14.44 | 9.61 | 15.25 | 15.68 | ||
| (1/n)*(dn/dT)*(K-1) x10-5 | 3.5 | 4.6 | 3.5 | 2.5 | 4.5 | 8.2 | 2.7 | 6.5 | 0.12 | ||
| Elastic Compliances (1012cm2 dyne-1) | S11 | 1.090 | 1.070 | 1.696 | 0.973 | 1.176 | 1.582 | 1.650 | 1.945 | 2.443 | |
| Elastic Compliances (1012cm2 dyne-1) | S12 | -0.350 | -0.320 | -0.562 | -0.298 | -0.365 | -0.495 | -0.594 | -0.685 | -0.863 | |
| Elastic Compliances (1012cm2 dyne-1) | S44 | 1.630 | 1.840 | 2.453 | 1.419 | 1.684 | 2.314 | 2.170 | 2.525 | 3.311 |