Note: Calculations are for a silicon substrate. Arsenic and Phosphorus provide electron mobilities, Boron provides hole mobility.
Source:
G. Masetti, M. Severi, and S. Solmi, "Modeling of Carrier Mobility Against Carrier Concentration in Arsenic-, Phosphorus-, and Boron-Doped Silicon," IEEE Trans. on Electron Dev., Vol. ED-30, No. 7 (July 1983), pp. 764-765.
