Impurity Profiles for Diffusion in Common Semiconductors
 

Select a semiconductor:

Silicon (Si)
Germanium (Ge)
Aluminum Antimonide (AlSb)
Gallium Arsenide (GaAs)
Gallium Phosphide (GaP)
Gallium Antimonide (GaSb)
Indium Arsenide (InAs)
Indium Phosphide (InP)
Indium Antimonide (InSb)

Select a dopant:

Boron (B)
Aluminum (Al)
Gallium (Ga)
Indium (In)
Phosphorus (P)
Arsenic (As)
Antimony (Sb)
Bismuth (Bi)
Copper (Cu)
Lithium (Li)
Sodium (Na)
Potassium (K)
Hydrogen (H)
Helium (He)

Select a profile:

Constant-Surface Constant-Total-Dopant

 

Enter the surface concentration: [cm-3]

 

Enter the annealing temperature: [°C] (900 to 1350)

Enter the annealing time: [min] (1 to 600)

Enter the substrate depth: [µm] (0 to 10)
 

 

 

Impurity concentration at the specified substrate depth [cm-3]

 

 

Impurity Concentration vs. Substrate Depth for above Parameters

 

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