Photolithography Chemicals and Materials

This page gives data for the best known processing methods for various adhesion promoters
and photoresists. The methods correspond to a specific use for each photoresist, which can
be found be clicking on the photoresist name.
The photolithography process can be changed to create different features.

Tables of Spin Speed vs Thickness

Basic Photolithography Process

Basic Lithography Tutorial

Positive Photoresist Spin Speed/Time Thickness Softbake Temp/Time Exposure Time (assuming 10mW/cm²) Developer Develop Time Post-Exposure Bake Temp/Time Minimum Feature Size

AZ 3312 4000rpm/60s 1um 90° C/60s 4-5s AZ300MIF 30-40s 90° C/60s 0.5um

AZ 3330 5000-6000rpm/60s 2um 90° C/60s 8-12s AZ300MIF 30-40s 90° C/60s 1um

Shipley 1.2L 4000rpm/70s 1um 90° C/60s 5-6s Shipley MF-26A 30-40s 115° C/60s 0.5um

Shipley 1.8M 4000rpm/90s 2um 90° C/60s 10-11s Shipley MF-26A 30-40s 115° C/60s 1um

AZ P4620 200rpm/30s,
6000/2s
Clean off back of wafer 9um 70° C/60s,
100° C/4min 60s (soft contact else resist will crack) AZ400K (diluted 1:4, agitate) 2min (repeat exposure/develop steps as many times as necessary) 70° C/5min,
90° C/5min,
110° C/10min -

Negative Photoresist Spin Speed/Time Thickness Softbake Temp/Time Exposure Time (assuming 10mW/cm²) Post-Exposure Bake Temp/Time Developer Develop Time Minimum Feature Size

nLOF 2020 2750rpm/60s 2um 110° C/60s 7-8s 110° C/60s AZ300MIF 60s 1um

Photodefinables Spin Speed Thickness Softbake Temp/Time Exposure Time (assuming 10mW/cm²) Post-Exposure Bake Temp/Time Developer Develop Time Curing Temp/Time Type Asect Ratio

Note: After developing the SU-8, rinse the wafer off with isopropyl alcohol, NOT water!

SU-8 5 Variable 1000 - 6000 6um - 2um 50° C/5min,
65° C/5min,
95° C/5min 20-25s 65° C/5min,
95° C/5min SU-8 Developer, gently agitate 50s
Very sensitive to concentration of developer 250C in vacuum (will burn away at atm.) negative -

SU-8 10 Variable 1000 - 6000 15um - 3um 65° C/10min,
95° C/10min 25-40s 65° C/10min,
95° C/10min SU-8 Developer, gently agitate 90s
Very sensitive to concentration of developer 250C in vacuum (will burn away at atm.) negative -

SU-8 25 Variable 1000 - 6000 30um - 5um 50° C/5min,
65° C/5min,
95° C/5min 1min - 45s 65° C/5min,
95° C/5min SU-8 Developer, gently agitate 4-2 mins
Very sensitive to concentration of developer 250C in vacuum (will burn away at atm.) negative -

SU-8 3005 Variable 750 - 5000 11um - 3um 65° C/5min,
95° C/5min 20-25s 65° C/5min,
95° C/5min SU-8 Developer, gently agitate 50s
Very sensitive to concentration of developer 250C in vacuum (will burn away at atm.) negative 5:1

SU-8 2000.5 Variable 3000/30s 600nm 65° C/1min,
95° C/3min 6s 65° C/1min,
95° C/4min SU-8 Developer, gently agitate 50s
Very sensitive to concentration of developer 250C in vacuum (will burn away at atm.) negative >10:1

PMGI 500/10s,
1000/30s,
6000/1s ~5um 65° C/1min,
250° C/20min
(Note: Ramp Down) 210s (Deep UV)
60 develop
Repeat until desired removal - AZ300 MIF (repeated)
(Very sensitive to over-development) 60s 120C/60s positive -

Polyimide / Spin-On-Glass Spin Speed Thickness Softbake Temp/Time Exposure Time (assuming 10mW/cm²) Post-Exposure Bake Temp/Time Developer Develop Time Curing Temp/Time Type Minimum Feature Size

Honeywell 1513EL 4000 rpm 1.5um - - - - - 200C - -

Adhesion Promoter Process

HMDS Spin@2000rpm 3-5s or until spread; apply before photoresist

Omni-Coat Apply, then spin wafer @ 3000 RPM for 20sec; apply before SU-8

Surpass 3000

Surpass 4000