Photolithography Chemicals and Materials

This page gives data for the best known processing methods for various adhesion promoters and photoresists. The methods correspond to a specific use for each photoresist, which can be found be clicking on the photoresist name. The photolithography process can be changed to create different features.

Tables of Spin Speed vs Thickness

Basic Photolithography Process for Positive and Negative Photoresists

Basic Lithography Tutorial

 

 

Positive Photoresist Spin Speed/Time Thickness Softbake Temp/Time Exposure Time (assuming 10mW/cm2) Developer Develop Time Post-Exposure Bake Temp/Time Minimum Feature Size
AZ 3312 4000rpm/60s 1um 90° C/60s 4-5s AZ300MIF 30-40s 90° C/60s 0.5um
AZ 3330 5000-6000rpm/60s 2um 90° C/60s 8-12s AZ300MIF 30-40s 90° C/60s 1um
Shipley 1.2L 4000rpm/70s 1um 90° C/60s 5-6s Shipley MF-26A 30-40s 115° C/60s 0.5um
Shipley 1.8M 4000rpm/90s 2um 90° C/60s 10-11s Shipley MF-26A 30-40s 115° C/60s 1um
AZ P4620 200rpm/30s,
6000/2s
Clean off back of wafer
9um 70° C/60s,
100° C/4min
60s (soft contact else resist will crack) AZ400K (diluted 1:4, agitate) 2min (repeat exposure/develop steps as many times as necessary) 70° C/5min,
90° C/5min,
110° C/10min
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*Note: No change in exposure time has been observed when using the south aligner with the new filters.

 

 

 

 

Negative Photoresist Spin Speed/Time Thickness Softbake Temp/Time Exposure Time (assuming 10mW/cm2) Post-Exposure Bake Temp/Time Developer Develop Time Minimum Feature Size
nLOF 2020 2750rpm/60s 2um 110° C/60s 7-8s 110° C/60s AZ300MIF 60s 1um

 

 

 

 

Photodefinables Spin Speed Thickness Softbake Temp/Time Exposure Time (assuming 10mW/cm2) Post-Exposure Bake Temp/Time Developer Develop Time Curing Temp/Time Type Asect Ratio
Note: After developing the SU-8, rinse the wafer off with isopropyl alcohol, NOT water!
SU-8 5 Variable 1000 - 6000 6um - 2um 50° C/5min,
65° C/5min,
95° C/5min
20-25s 65° C/5min,
95° C/5min
SU-8 Developer, gently agitate 50s
Very sensitive to concentration of developer
250C in vacuum (will burn away at atm.)
negative
-
SU-8 10 Variable 1000 - 6000 15um - 3um 65° C/10min,
95° C/10min
25-40s 65° C/10min,
95° C/10min
SU-8 Developer, gently agitate 90s
Very sensitive to concentration of developer
250C in vacuum (will burn away at atm.)
negative
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SU-8 25 Variable 1000 - 6000 30um - 5um 50° C/5min,
65° C/5min,
95° C/5min
1min - 45s 65° C/5min,
95° C/5min
SU-8 Developer, gently agitate 4-2 mins
Very sensitive to concentration of developer
250C in vacuum (will burn away at atm.)
negative
-
SU-8 3005 Variable 750 - 5000 11um - 3um 65° C/5min,
95° C/5min
20-25s 65° C/5min,
95° C/5min
SU-8 Developer, gently agitate 50s
Very sensitive to concentration of developer
250C in vacuum (will burn away at atm.)
negative
5:1
SU-8 2000.5 Variable 3000/30s 600nm 65° C/1min,
95° C/3min
6s 65° C/1min,
95° C/4min
SU-8 Developer, gently agitate 50s
Very sensitive to concentration of developer
250C in vacuum (will burn away at atm.)
negative
>10:1
PMGI 500/10s,
1000/30s,
6000/1s
~5um 65° C/1min,
250° C/20min
(Note: Ramp Down)
210s (Deep UV)
60 develop
Repeat until desired removal
- AZ300 MIF (repeated)
(Very sensitive to over-development)
60s
120C/60s
positive
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*Note: Exposure times for SU8 have increased by about 40% when using the south aligner with the new filters.

 

 

 

 

Polyimide / Spin-On-Glass Spin Speed Thickness Softbake Temp/Time Exposure Time (assuming 10mW/cm2) Post-Exposure Bake Temp/Time Developer Develop Time Curing Temp/Time Type Minimum Feature Size
Honeywell 1513EL 4000 rpm 1.5um
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-
-
-
-
200C
-
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Adhesion Promoter Process
HMDS Spin@2000rpm 3-5s or until spread; apply before photoresist
Omni-Coat Apply, then spin wafer @ 3000 RPM for 20sec; apply before SU-8
Surpass 3000  
Surpass 4000