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Impurity Concentration
vs. Substrate Depth
for above Parameters
Click here for a list of Ion Implantation Houses.
Diffusion constants were taken from the "Quick Reference Manual for Silicon Integrated Circuit Technology", by W. E. Beadle, J. C. C. Tsai, and R. D. Plummer.
Polynomial coefficients for range and straggle calculation, and diffused implant profile equation taken from "Analysis and Simulation of Semiconductor Devices", pp. (4851, 72), Seigfried Selberherr, 1984.
