Energy Gap in III-V Ternary Semiconductors

Select Ternary Alloy Calculated Parameters
AlxIn1-xP
AlxGa1-xAs
AlxIn1-xAs
AlxGa1-xSb
AlxIn1-xSb
GaxIn1-xP
GaxIn1-xAs
GaxIn1-xSb
GaPxAs1-x
GaAsxSb1-x
InPxAs1-x
InAsxSb1-x
  Direct Energy Gap:
Lattice Constant:
Density:
Dielectric constant (static):
Dielectric constant (high freq.):
Effective mass electron:
hole:
light hole:
Electron affinity:
refractive index (infrared) n:
Piezoelectric constant:
Elastic constant C11:
C12:
C44:
 
 
 
 
 
 
 
 
 
 
 
 
 
 

* mo = 9.1095x10-28 g

 

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x= %



Equations used to calculate Direct Energy Gap

AlxIn1-xP 1.34 + 2.23x
AlxGa1-xAs 1.424 + 1.247 (x<0.45)
1.424 + 1.087x + 0.438x2
AlxIn1-xAs 0.36 + 2.35x + 0.24x2
AlxGa1-xSb 0.73 + 1.10x + 0.47x2
AlxIn1-xSb 0.172 + 1.621x + 0.43x2
GaxIn1-xP 1.34 + 0.511x + 0.6043x2
(0.49
GaxIn1-xAs 0.356 + 0.7x + 0.4x2
GaxIn1-xSb 0.172 + 0.165x + 0.413x2
GaPxAs1-x 1.424 + 1.172x + 0.186x2
GaAsxSb1-x 0.73 - 0.5x + 1.2x2
InPxAs1-x 0.356 + 0.675x + 0.32x2
InAsxSb1-x 0.18 - 0.41x + 0.58x2
Source: Swaminathan, V; Macrander, A. T.; Materials Aspects of GaAs and InP based Structures. 1991.